P Channel MOSFETS

Marking: 6Y3360PDrain Source Voltage: -60VContinous Drain Current: -30AON State Resistance: 0.036R @ Vgs=-4.5VGate Threshold Voltage: -2V typ.Input Capacitance: 2590pF max.Output Capacitance: 202pF max.Turn on Delay: 9nsRise time: 16nsTurn off Delay: 81nsFall time: 310ns Package/Image: LFPAK-4..

Marking: QJ431Grade: AutomotiveDrain Source Voltage: -200VContinous Drain Current: -12AON State Resistance: 0.221RGate Threshold Voltage: -3.5V typ.Input Capacitance: 4355pF max.Output Capacitance: 245pF max.Turn on Delay: 23nsRise time: 17nsTurn off Delay: 66nsFall time: 15ns Package/Image: SO-8L..

Marking: 30P06PDrain Source Voltage: -60VContinous Drain Current: -30AON State Resistance: 0.075RGate Threshold Voltage: -3V typ.Input Capacitance: 1535pF max.Output Capacitance: 387pF max.Turn on Delay: 19.5nsRise time: 16.5nsTurn off Delay: 45nsFall time: 30ns Package/Image: DPAK..

Drain to Source Breakdown Voltage: -100VDCContinous Drain Current: -6.6A @ Tc=25CPower Dissipation: 40WStatic Drain to source ON Resistance: 0.48RGate Threshold Voltage: -4.0V max.Input Capacitance: 350pFOutput Caapacitance: 110pFTurn-on Delay: 14nsRise Time: 47nsTurn Off Time: 28nsFall Time: 31ns P..

Short SpecificationsDrain Current : -8.0 A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: -30 VDCGate Threshold Voltage: -1.0V maxOn Resistance: 0.02 ohms @ Vgs=10VTotal Gate Charge: 60 nC Package/Image: SOIC-8..

Short Specifications:Drain Current : -9.2A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: -30 VDCGate Threshold Voltage: -1.3 to -2.4VOn Resistance: 0.0194 ohms @ Vgs=-10VTotal Gate Charge: 14 nC Package/Image: SOIC-8..

Short Specifications:Drain Current : -5.4A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: -30 VDCGate Threshold Voltage: -1.3 to -2.4VOn Resistance: 0.059 ohms @ Vgs=-10VTotal Gate Charge: 9.1 nC Package/Image: SOIC-8..

Short Specifications:Drain Current : -12A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: -30 VDCGate Threshold Voltage: -1.3 to -2.4VOn Resistance: 0.0119 ohms @ Vgs=-10VTotal Gate Charge: 18 nC Package/Image: SOIC-8..

Short Specifications:Drain Current : -15A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: -30 VDCGate Threshold Voltage: -1.3 to -2.4VOn Resistance: 0.0072 ohms @ Vgs=-10VTotal Gate Charge:34 nC Package/Image: SOIC-8..

Short Specifications:Drain Current : -16A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: -30 VDCGate Threshold Voltage: -1.3 to -2.4VOn Resistance: 0.0066 ohms @ Vgs=-10VTotal Gate Charge:31 nC Package/Image: SOIC-8..

Short Specifications:Drain Current : -20A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: -30 VDCGate Threshold Voltage: -1.3 to -2.4VOn Resistance: 0.0046 ohms @ Vgs=-10VTotal Gate Charge:58 nC Package/Image: SOIC-8..

Short Specifications:Drain Current : -15.0A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: -20VDCGate Threshold Voltage: -0.9VOn Resistance: 0.0082 ohms @ Vgs=--4.5VTotal Gate Charge: 130 nC Package/Image: SOIC-8..