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Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.Marking: 72210EGrade: AutomotiveDrain Source Voltage: 100VContinuous Drain Current: 49AO..

Quick SpecificationsDrain Current : 17 A @ 25C max.Power Dissipation: 49WDrain to Source Breakdown Voltage: 60 VDCGate Threshold Voltage: 1.5-2.5VOn Resistance: 0.046-0.064 ohms @ Vgs=10V, 0.085 @Vgs=4.5VTotal Gate Charge: 7.8 nC Package/Image: DPAK..

Marking: 6Y3360PDrain Source Voltage: -60VContinous Drain Current: -30AON State Resistance: 0.036R @ Vgs=-4.5VGate Threshold Voltage: -2V typ.Input Capacitance: 2590pF max.Output Capacitance: 202pF max.Turn on Delay: 9nsRise time: 16nsTurn off Delay: 81nsFall time: 310ns Package/Image: LFPAK-4..

Marking: QJ848Grade: AutomotiveDrain Source Voltage: 40VContinuous Drain Current: 47AON State Resistance: 0.0075RGate Threshold Voltage: 2.5V typ.Input Capacitance: 2500pF max.Output Capacitance: 260pF typ.Turn on Delay: 40nsRise time: 20nsTurn off Delay: 40nsFall time: 15ns Package/Image: SO-8L..

Marking: QJ431Grade: AutomotiveDrain Source Voltage: -200VContinous Drain Current: -12AON State Resistance: 0.221RGate Threshold Voltage: -3.5V typ.Input Capacitance: 4355pF max.Output Capacitance: 245pF max.Turn on Delay: 23nsRise time: 17nsTurn off Delay: 66nsFall time: 15ns Package/Image: SO-8L..

Marking: 30P06PDrain Source Voltage: -60VContinous Drain Current: -30AON State Resistance: 0.075RGate Threshold Voltage: -3V typ.Input Capacitance: 1535pF max.Output Capacitance: 387pF max.Turn on Delay: 19.5nsRise time: 16.5nsTurn off Delay: 45nsFall time: 30ns Package/Image: DPAK..

Marking: 4N0405Drain Source Voltage: 40VContinuous Drain Current: 86AON State Resistance: 0.0052RGate Threshold Voltage: 3.0V typ.Input Capacitance: 2960pF max.Output Capacitance: 730pF max.Turn on Delay: 9nsRise time: 11nsTurn off Delay: 7nsFall time: 10ns Package/Image: DPAK..

Marking: 983255Grade: AutomotiveDrain Source Voltage: 55VContinuous Drain Current: 12AON State Resistance: 36mRGate Threshold Voltage: 1.5V typ.Input Capacitance: 1594pF max.Output Capacitance: 254pF max.Turn on Delay: 14nsRise time: 125nsTurn off Delay: 64nsFall time: 68ns Package/Image: SOT223..

Drain to Source Breakdown Voltage: -100VDCContinous Drain Current: -6.6A @ Tc=25CPower Dissipation: 40WStatic Drain to source ON Resistance: 0.48RGate Threshold Voltage: -4.0V max.Input Capacitance: 350pFOutput Caapacitance: 110pFTurn-on Delay: 14nsRise Time: 47nsTurn Off Time: 28nsFall Time: 31ns P..

Short SpecificationsDrain Current : -8.0 A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: -30 VDCGate Threshold Voltage: -1.0V maxOn Resistance: 0.02 ohms @ Vgs=10VTotal Gate Charge: 60 nC Package/Image: SOIC-8..

Short SpecificationsDrain Current : 13.5 A @ 25C max.Power Dissipation: 1;4WDrain to Source Breakdown Voltage: 30 VDCGate Threshold Voltage: 3.0V maxOn Resistance: 0.0085 ohms @ Vgs=10VTotal Gate Charge: 50 nC Package/Image: SOIC-8..

Short Specifications (Per device)Drain Current : 10 A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: 30 VDCGate Threshold Voltage: 1.0On Resistance: 0.0135 ohms @ Vgs=10VTotal Gate Charge: 45 nC Package/Image: SOIC-8..