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N Channel MOSFETS

Brand: IR
Short SpecificationsDrain Current : 15 A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: 20 VDCGate Threshold Voltage: 1.0-3.0VOn Resistance: 0.007 ohms @ Vgs=10VTotal Gate Charge: 42 nC Package/Image: SOIC-8..
₱28.00
Brand: IR
Short SpecificationsDrain Current : 16 A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: 20 VDCGate Threshold Voltage: 2.0On Resistance: 0.0065 ohms @ Vgs=10VTotal Gate Charge: 62 nC Package/Image: SOIC-8..
₱29.00
Brand: IR
Short SpecificationsDrain Current : 4.5A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: 100 VDCGate Threshold Voltage: 5.5VOn Resistance: 0.06 ohms @ Vgs=10VTotal Gate Charge: 50 nC Package/Image: SOIC-8..
₱34.00
Brand: IR
Short SpecificationsDrain Current : 3.6A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: 150 VDCGate Threshold Voltage: 5.5VOn Resistance: 0.09 ohms @ Vgs=10VTotal Gate Charge: 41 nC Package/Image: SOIC-8..
₱34.00
Brand: IR
Short SpecificationsDrain Current : 13.0 A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: 30 VDCGate Threshold Voltage: 3.0V maxOn Resistance: 0.011 ohms @ Vgs=10VTotal Gate Charge: 79 nC Package/Image: SOIC-8..
₱27.00
Brand: IR
Short SpecificationsDrain Current : 8.7 A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: 20 VDCGate Threshold Voltage: 0.7VOn Resistance: 0.022 ohms @ Vgs=10VTotal Gate Charge: 48 nC Package/Image: SOIC-8..
₱26.00
Brand: IR
Short Specifications (Per device)Drain Current : 8.0 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: 60 VDCGate Threshold Voltage: 2.0-4.0VOn Resistance: 0.018 ohms @ Vgs=10VTotal Gate Charge: 36 nC Package/Image: SOIC-8..
₱36.00
Brand: IR
Short Specifications (Per device)Drain Current : 7.0 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: 20 VDCGate Threshold Voltage: 1.20VOn Resistance: 0.03 ohms @ Vgs=10VTotal Gate Charge: 20 nC Package/Image: SOIC-8..
₱30.00
IRF7303 Dual N Channel Logic MOSFET  30V 4.9A Vgth=1.0V SOIC 8
Pre-order
Brand: IR
Short Specifications (Per device)Drain Current : 4.9 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: 30 VDCGate Threshold Voltage: 1.0VOn Resistance: 0.05 ohms @ Vgs=10VTotal Gate Charge: 25 nC Package/Image: SOIC-8..
₱28.00
Brand: IR
Short Specifications (Per device)Drain Current : 3.0 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: 50 VDCGate Threshold Voltage: 3.0VOn Resistance: 0.13 ohms @ Vgs=10VTotal Gate Charge: 30 nC Package/Image: SOIC-8..
₱27.00
600V,1.3A N-Channel MOSFET Package/Image: D2PACK..
₱16.00
P55NF06 N-Channel Mosfet 60V 50A Package/Image: TO220..
₱35.00
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