N/P Combination MOSFETS

Short Specifications (N-Channel/P-Channel)Drain Current : 3.5/-2.3 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: 30/-30 VDCGate Threshold Voltage: 1.0/-1.0VOn Resistance: 0.1/0.25 ohms @ Vgs=10VTotal Gate Charge: 14/12 nC Package/Image: SOIC-8..

Short Specifications (N-Channel/P-Channel)Drain Current : 7.3/-5.3 A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: 30/-30 VDCGate Threshold Voltage: 0.7/-0.7VOn Resistance: 0.029/0.058 ohms @ Vgs=10VTotal Gate Charge: 33/34 nC Package/Image: SOIC-8..

Short Specifications (N-Channel/P-Channel)Drain Current : 6.6/-5.3 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: 20/-20 VDCGate Threshold Voltage: 0.7/-0.7VOn Resistance: 0.029/0.058 ohms @ Vgs=10VTotal Gate Charge: 27/29 nC Package/Image: SOIC-8..

Short Specifications (N-Channel/P-Channel)Drain Current : 3.5/-2.3 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: 25/-25 VDCGate Threshold Voltage: 3.0/-3.0VOn Resistance: 0.1/0.25 ohms @ Vgs=10VTotal Gate Charge: 27/25 nC Package/Image: SOIC-8..

25V 0.68/0.46A 0.45/1.1R N/P Ch LogicCompound N and P Channel MOSFET Package/Image: SOT23-6..

20V 8A.4.3A N/P Channel LogicCompound N and P Channel MOSFET Package/Image: SOIC-8..

20V 6A N/P Channel Compound N and P Channel MOSFET Package/Image: SOIC-8..