IR

Drain to Source Breakdown Voltage: -100VDCContinous Drain Current: -6.6A @ Tc=25CPower Dissipation: 40WStatic Drain to source ON Resistance: 0.48RGate Threshold Voltage: -4.0V max.Input Capacitance: 350pFOutput Caapacitance: 110pFTurn-on Delay: 14nsRise Time: 47nsTurn Off Time: 28nsFall Time: 31ns P..

Short SpecificationsDrain Current : -8.0 A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: -30 VDCGate Threshold Voltage: -1.0V maxOn Resistance: 0.02 ohms @ Vgs=10VTotal Gate Charge: 60 nC Package/Image: SOIC-8..

Short SpecificationsDrain Current : 13.5 A @ 25C max.Power Dissipation: 1;4WDrain to Source Breakdown Voltage: 30 VDCGate Threshold Voltage: 3.0V maxOn Resistance: 0.0085 ohms @ Vgs=10VTotal Gate Charge: 50 nC Package/Image: SOIC-8..

Short Specifications (Per device)Drain Current : 10 A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: 30 VDCGate Threshold Voltage: 1.0On Resistance: 0.0135 ohms @ Vgs=10VTotal Gate Charge: 45 nC Package/Image: SOIC-8..

Short Specifications (N-Channel/P-Channel)Drain Current : 3.5/-2.3 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: 30/-30 VDCGate Threshold Voltage: 1.0/-1.0VOn Resistance: 0.1/0.25 ohms @ Vgs=10VTotal Gate Charge: 14/12 nC Package/Image: SOIC-8..

Short Specifications:Drain Current : -9.2A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: -30 VDCGate Threshold Voltage: -1.3 to -2.4VOn Resistance: 0.0194 ohms @ Vgs=-10VTotal Gate Charge: 14 nC Package/Image: SOIC-8..

Short Specifications:Drain Current : -5.4A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: -30 VDCGate Threshold Voltage: -1.3 to -2.4VOn Resistance: 0.059 ohms @ Vgs=-10VTotal Gate Charge: 9.1 nC Package/Image: SOIC-8..

Short Specifications:Drain Current : -12A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: -30 VDCGate Threshold Voltage: -1.3 to -2.4VOn Resistance: 0.0119 ohms @ Vgs=-10VTotal Gate Charge: 18 nC Package/Image: SOIC-8..

Short Specifications:Drain Current : -15A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: -30 VDCGate Threshold Voltage: -1.3 to -2.4VOn Resistance: 0.0072 ohms @ Vgs=-10VTotal Gate Charge:34 nC Package/Image: SOIC-8..

Short Specifications:Drain Current : -16A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: -30 VDCGate Threshold Voltage: -1.3 to -2.4VOn Resistance: 0.0066 ohms @ Vgs=-10VTotal Gate Charge:31 nC Package/Image: SOIC-8..

Short Specifications:Drain Current : -20A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: -30 VDCGate Threshold Voltage: -1.3 to -2.4VOn Resistance: 0.0046 ohms @ Vgs=-10VTotal Gate Charge:58 nC Package/Image: SOIC-8..

Short Specifications (Q1/Q2)Drain Current : 9.1/11A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage:30 VDCGate Threshold Voltage: 1.35-2.35VOn Resistance: 0.0164/0.0118 ohms @ Vgs=10VTotal Gate Charge: 10/21 nC Package/Image: SOIC-8..