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IR

Brand: IR
Short Specifications (Per device)Drain Current : -5.3 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: -20 VDCGate Threshold Voltage: -0.7VOn Resistance: 0.058 ohms @ Vgs=10VTotal Gate Charge: 29 nC Package/Image: SOIC-8..
₱34.00
Brand: IR
Short Specifications (Per device)Drain Current : -4.3 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: -20 VDCGate Threshold Voltage: -0.7VOn Resistance: 0.09 ohms @ Vgs=10VTotal Gate Charge: 22 nC Package/Image: SOIC-8..
₱32.00
Brand: IR
Short Specifications (Per device)Drain Current : 4.9 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: 30 VDCGate Threshold Voltage: 1.0VOn Resistance: 0.05 ohms @ Vgs=10VTotal Gate Charge: 25 nC Package/Image: SOIC-8..
₱28.00
Brand: IR
Short Specifications:Drain Current : -10.5A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: -40 VDCGate Threshold Voltage: -3.0On Resistance: 0.015 ohms @ Vgs=-10VTotal Gate Charge:110 nC Package/Image: SOIC-8..
₱33.00
Brand: IR
Short Specifications (N-Channel/P-Channel)Drain Current : 3.5/-2.3 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: 25/-25 VDCGate Threshold Voltage: 3.0/-3.0VOn Resistance: 0.1/0.25 ohms @ Vgs=10VTotal Gate Charge: 27/25 nC Package/Image: SOIC-8..
₱32.00
Brand: IR
Short Specifications (Per device)Drain Current : 3.0 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: 50 VDCGate Threshold Voltage: 3.0VOn Resistance: 0.13 ohms @ Vgs=10VTotal Gate Charge: 30 nC Package/Image: SOIC-8..
₱27.00
Brand: IR
Short Specifications:Drain Current : -0.7 A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: -150 VDCGate Threshold Voltage: -5.0On Resistance: 2.4 ohms @ Vgs=10VTotal Gate Charge: 9 nC Package/Image: SOIC-8..
₱22.00
Brand: IR
500V 3,3A 3R NCh MOSFET N Channel Package/Image: DPAK..
₱38.00
Brand: IR
Half Bridge MOSFET Driver 600V Package/Image: SOIC-8..
₱49.00
Brand: IR
Dual 400V 35A 38ns Ultrafast Package/Image: TO218..
₱198.00
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